2SD532

Si Transistor

NPN

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 45

Package: TO3