Type Designator: 2SD920
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc),100 W
Maximum collector-base voltage |Ucb|, 200V
Maximum collector-emitter voltage |Uce|, V:
Maximum emitter-base voltage |Ueb|,6V
Maximum collector current |Ic max|, 5A
Maksimalna temperatura (Tj), 150℃
Transition frequency (ft), : 12MHz
Collector capacitance (Cc), : 35pF
Forward current transfer ratio (hFE), min: 700
Noise Figure, dB: -
Package of 2SD920 transistor: TO3