Type Designator: 2SD920

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc),100 W

Maximum collector-base voltage |Ucb|, 200V

Maximum collector-emitter voltage |Uce|, V:

Maximum emitter-base voltage |Ueb|,6V

Maximum collector current |Ic max|, 5A

Maksimalna temperatura (Tj), 150℃

Transition frequency (ft), : 12MHz

Collector capacitance (Cc), : 35pF

Forward current transfer ratio (hFE), min: 700

Noise Figure, dB: -

Package of 2SD920 transistor: TO3