Type Designator: 2SD251

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO66