2SD1195

Si Transistor

NPN

Maximum Collector Power Dissipation (Pc): 35 W

Maximum Collector-Base Voltage |Vcb|: 110 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: TO220