2SC640

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.15W

Maximum collector-base voltage |Ucb|, V: 30V

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 5V

Maximum collector current |Ic max|, A: 0.1A

Maksimalna temperatura (Tj), °C: 125

Transition frequency (ft), MHz: 50MHz

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 120