Name: 2SC645

Material of transistor: シリコンTR

Polarity: NPN

Maximum collector power dissipation (Pc): 140mW

Maximum collector-base voltage (Ucb): 30V

Maximum collector-emitter voltage (Uce):

Maximum emitter-base voltage (Ueb): 5V

Maximum collector current (Ic max): 30mA

Maximum junction temperature (Tj): 175°C

Transition frequency (ft): 100MHz

Collector capacitance (Cc), Pf: 3

Forward current transfer ratio (hFE), min/max: 100T

Manufacturer of 2SC645 transistor: MATSUSHITA

Package of 2SC645 transistor: R145