2SA530
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Type Designator: 2SA530

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 175 ツーC

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 65