2SA911

Si Transistor

PNP

Maximum Collector Power Dissipation (Pc): 0.47 W

Maximum Collector-Base Voltage |Vcb|: 850 V

Maximum Collector-Emitter Voltage |Vce|: 850 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 9 MHz

Collector Capacitance (Cc): 16 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Package: TO5