2SC1120

Material of Transistor: Si

NPN Transistor

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 350 MHz

Forward Current Transfer Ratio (hFE), MIN: 20