Type Designator: 2SC1105

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc), W: 15

Maximum Collector-Base Voltage |Vcb|, V: 300

Maximum Collector-Emitter Voltage |Vce|, V: 270

Maximum Emitter-Base Voltage |Veb|, V: 5

Maximum Collector Current |Ic max|, A: 0.1

Max. Operating Junction Temperature (Tj), °C: 150

Transition Frequency (ft), MHz: 10

Collector Capacitance (Cc), pF:

Forward Current Transfer Ratio (hFE), min: 40

Noise Figure, dB: -

Package: TO66